DIFFUSION HEATER
Applications:
Diffusion furnaces are vital in semiconductor manufacturing, introducing dopants into silicon wafers to modify their electrical properties. They maintain uniform temperatures between 600°C and 1,350°C, ensuring precise doping processes that are crucial in semiconductor device fabrication, enabling the creation of transistors, integrated circuits, and other electronic components.
They are used for thermal oxide growth, doping, and dopant diffusion.
Diffusion Furnace Heater is engineered for the production of high-quality solar cells and semiconductor silicon wafers. It features a construction where SUS stainless steel is wrapped around ceramic fiber insulation, which is vacuum-adsorbed and integrated, ensuring efficient thermal management. This design allows for both vertical and horizontal placement, with an operating temperature range of 200°C to 1,350°C. ​
Advantages:
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Six-Part Heat Field Design: This innovative configuration achieves superior temperature uniformity and energy efficiency during operation. ​
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Enhanced Heat Resistance and Insulation: The high-quality ceramic fiber insulation provides excellent heat resistance and retention, ideal for applications requiring efficient thermal management, leading to reduced energy consumption and extended furnace lifespan. ​
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Horizontal or Vertical Installation
SA1200/SA1300
